S11141-10Si photodiode

S11141-10

Datasheet [477 KB/PDF]

High sensitivity, direct detection of low energy (1 keV or more) electron beams

 

 

Features
-Direct detection of low energy (1 keV or more) electron beams with high sensitivity
-High gain: 300 times
   high detection efficiency: 72 % (incident electronenergy: 1.5 keV)
-Large photosensitive area size: 10 × 10 mm
-φ2.0 mm hole in center of photosensitive area
-Thin ceramic package
-Uses a wiring board made of less magnetic materials

Notice

The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Unsealed products / Precautions” described below.

Unsealed products / Precautions [PDF]

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Specifications

Photosensitive area 10 x 10 mm
Number of elements 1
Package Ceramic
Incident electron energy range (typ.) 1~30 keV
Electron multiplying gain (typ.) 300
Reverse voltage (max.) 20 V
Dark current (max.) 60000 pA
Cutoff frequency (typ.) 2.5 MHz
Terminal capacitance (typ.) 450 pF
Measurement condition Ta=25 ℃, VR=5 V

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Dimensional outline (unit: mm)

k_s11141_do_xx.jpg

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Recommended products

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Disclaimer
 [66KB/PDF]

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