S11499-01IR-enhanced Si PIN photodiode


Datasheet [228 KB/PDF]

Large area, enhanced near IR sensitivity, using a MEMS technology


HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499-01 is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499-01 has much higher sensitivity to YAG laser light (1.06 um). It also offers improved temperature characteristics of sensitivity at wavelengths longer than 950 nm.


- High sensitivity: 0.6 A/W (λ=1060 nm)
- Large active area: φ5.0 mm
- High reliability package: TO-8 metal package


Photosensitive area φ5 mm
Number of elements 1
Package Metal
Package category TO-8
Cooling 非冷却
Reverse voltage (max.) 30 V
Spectral response range 360 to 1140 nm
Peak sensitivity wavelength (typ.) 1000 nm
Photosensitivity (typ.) 0.6 A/W
Dark current (max.) 10000 pA
Cutoff frequency (typ.) 15 MHz
Terminal capacitance (typ.) 33 pF
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=1060 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, -3 dB, RL=50 Ω, λ=830 nm, Terminal capacitance: VR=20 V, f=1 MHz

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Spectral response


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Dimensional outline (unit: mm)


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