S11499IR-enhanced Si PIN photodiode


Datasheet [228 KB/PDF]

Large area, enhanced near IR sensitivity, using a MEMS technology


HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 is a Si PIN photodiode with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 has much higher sensitivity to YAG laser light (1.06 um). It also offers improved temperature characteristics of sensitivity at wavelengths longer than 950 nm.


- High sensitivity: 0.6 A/W (λ=1060 nm)
- High reliability: TO-5 metal package


Photosensitive area φ3 mm
Number of elements 1
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 360 to 1140 nm
Peak sensitivity wavelength (typ.) 1000 nm
Photosensitivity (typ.) 0.6 A/W
Dark current (max.) 5000 pA
Cutoff frequency (typ.) 30 MHz
Terminal capacitance (typ.) 13 pF
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=1060 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, -3 dB, RL=50 Ω, λ=830 nm, Terminal capacitance: VR=20 V, f=1 MHz

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Spectral response


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Dimensional outline (unit: mm)


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