S12028IR-enhaned Si PIN photodiode


Datasheet [584 KB/PDF]

Enhanced near IR sensitivity, using a MEMS techonology


The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers signifi cantly higher sensitivity than our previous product (S5821).


- High sensitivity in near infrared range: 0.5 A/W (λ=1060 nm)
- Photosensitive area: φ1.2 mm
- High reliability package : 2-pin TO-18


Photosensitive area φ1.2 mm
Number of elements 1
Package Metal
Package category TO-18
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 360 to 1140 nm
Peak sensitivity wavelength (typ.) 980 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 2000 pA
Rise time (typ.) 10 μs
Terminal capacitance (typ.) 4 pF
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=1060 nm, Dark current: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz

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Spectral response


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Dimensional outline (unit: mm)


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