S3477-03Si photodiode


Datasheet [299 KB/PDF]

Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR


The S3477-03 combines a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making this sensor suitable for low-light-level detection where a high S/N is required. The S3477-03 is hermetically sealed in a TO-66 package.


- High S/N
- High UV sensitivity
- Built-in thermistor allows stable operation


Photosensitive area 2.4 × 2.4 mm
Number of elements 1
Package Metal
Package category TO-66
Cooling TE-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.42 A/W
Dark current (max.) 38 pA
Rise time (typ.) 0.2 μs
Terminal capacitance (typ.) 65 pF
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity:λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V

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Spectral response


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Dimensional outline (unit: mm)


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