S3584-08Si PIN photodiode

S3584-08

Datasheet [582 KB/PDF]

Large photosensitive area Si PIN photodiodes

 

 

Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

Specifications

Photosensitive area 28 × 28 mm
Number of elements 1
Package Ceramic
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 30000 pA
Cutoff frequency (typ.) 10 MHz
Terminal capacitance (typ.) 300 pF
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz

Go to top

Spectral response

k_s3204-08_sr_xx.jpg

Go to top

Dimensional outline (unit: mm)

k_s3584-08_do_xx.jpg

Go to top

Go to top

Disclaimer
 [66KB/PDF]

The save-to-list function can only work if JavaScript is turned on.

The recently viewed function can only work if JavaScript is turned on.