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The lineup of Si photodiodes we manufacture utilizing our own advanced semiconductor process technologies covers a broad spectral range from the near infrared to ultraviolet and even to high-energy regions, and features high-speed response, high sensitivity, and low noise. HAMAMATSU Si photodiodes are used in a wide range of applications including medical and analytical fields, scientific measurements, optical communications, and general electronic products. These photodiodes are available in various packages such as metal, ceramic, and plastic packages, as well as in surface mount types. HAMAMATSU also offers custom-designed devices to meet special needs.

149 items found

 Type No.Product NamePhotosensitive areaSpectral response rangePhotosensitivity (typ.)PackageType
S12497 Si photodiode 9.5 × 9.5 mm 400 to 1100 nm 0.57 A/W PWB with pins PWB with pins
S12498 Si photodiode 6.0 × 6.0 mm 400 to 1100 nm 0.57 A/W PWB with pins PWB with pins
S13773 Si PIN photodiode φ0.8 mm 320 to 1000 nm 0.54 A/W Glass epoxy Cut-off frequency:
500 MHz to less than 1 GHz
S1087,S1087-01 Si photodiode 1.3 × 1.3 mm 320 to 730 nm 0.3 A/W Ceramic For visible range
S1087,S1087-01 Si photodiode 1.3 × 1.3 mm 320 to 1100 nm 0.58 A/W Ceramic For visible range to near IR
S1133 Si photodiode 2.8 × 2.4 mm 320 to 730 nm 0.3 A/W Ceramic For visible range
S1133-01,S1133-14 Si photodiode 2.8 × 2.4 mm 320 to 1100 nm 0.58 A/W Ceramic For visible range to near IR
S1133-01,S1133-14 Si photodiode 2.8 × 2.4 mm 320 to 1000 nm 0.4 A/W Ceramic For visible range to near IR
S1223,S1223-01 Si PIN photodiode 2.4 × 2.8 mm 320 to 1100 nm 0.52 A/W TO-5 Cut-off frequency:
10 MHz to less than 100 MHz
S1223,S1223-01 Si PIN photodiode 3.6 × 3.6 mm 320 to 1100 nm 0.52 A/W TO-5 Cut-off frequency:
10 MHz to less than 100 MHz
S1226-18BK,S1226-18BQ,etc Si photodiode 1.1 × 1.1 mm 320 to 1000 nm 0.36 A/W TO-18 For UV to near IR:

IR sensitivity suppressed type
S1226-18BK,S1226-18BQ,etc Si photodiode 1.1 × 1.1 mm 190 to 1000 nm 0.36 A/W T0-18 For UV to near IR:

IR sensitivity suppressed type
S1226-44BK,S1226-44BQ,etc Si photodiode 3.6 × 3.6 mm 320 to 1000 nm 0.36 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1226-44BK,S1226-44BQ,etc Si photodiode 3.6 × 3.6 mm 190 to 1000 nm 0.36 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1226-44BK,S1226-44BQ,etc Si photodiode 2.4 × 2.4 mm 320 to 1000 nm 0.36 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1226-44BK,S1226-44BQ,etc Si photodiode 2.4 × 2.4 mm 190 to 1000 nm 0.36 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1226-8BK,S1226-8BQ,etc Si photodiode 5.8 × 5.8 mm 320 to 1000 nm 0.36 A/W TO-8 For UV to near IR:

IR sensitivity suppressed type
S1226-8BK,S1226-8BQ,etc Si photodiode 5.8 × 5.8 mm 190 to 1000 nm 0.36 A/W TO-8 For UV to near IR:

IR sensitivity suppressed type
S1227-1010BQ,S1227-1010BR,etc Si photodiode 10 × 10 mm 190 to 1000 nm 0.36 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-1010BQ,S1227-1010BR,etc Si photodiode 10 × 10 mm 340 to 1000 nm 0.43 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-16BQ,S1227-16BR,etc Si photodiode 5.9 × 1.1 mm 190 to 1000 nm 0.36 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-16BQ,S1227-16BR,etc Si photodiode 5.9 × 1.1 mm 340 to 1000 nm 0.43 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-33BQ,S1227-33BR,etc Si photodiode 2.4 × 2.4 mm 190 to 1000 nm 0.36 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-33BQ,S1227-33BR,etc Si photodiode 2.4 × 2.4 mm 340 to 1000 nm 0.43 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-66BQ,S1227-66BR,etc Si photodiode 5.8 × 5.8 mm 190 to 1000 nm 0.36 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-66BQ,S1227-66BR,etc Si photodiode 5.8 × 5.8 mm 340 to 1000 nm 0.43 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1226-18BK,S1226-18BQ,etc Si photodiode 1.1 × 1.1 mm 320 to 1100 nm 0.5 A/W TO-18 For UV to near IR:

IR sensitivity suppressed type
S1226-18BK,S1226-18BQ,etc Si photodiode 1.1 × 1.1 mm 190 to 1100 nm 0.5 A/W TO-18 For UV to near IR:

IR sensitivity suppressed type
S1336-44BK,S1336-44BQ,etc Si photodiode 3.6 × 3.6 mm 320 to 1100 nm 0.5 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1336-44BK,S1336-44BQ,etc Si photodiode 3.6 × 3.6 mm 190 to 1100 nm 0.5 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1336-44BK,S1336-44BQ,etc Si photodiode 2.4 × 2.4 mm 320 to 1100 nm 0.5 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1336-44BK,S1336-44BQ,etc Si photodiode 2.4 × 2.4 mm 190 to 1100 nm 0.5 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1226-8BK,S1226-8BQ,etc Si photodiode 5.8 × 5.8 mm 320 to 1100 nm 0.5 A/W TO-8 For UV to near IR:

IR sensitivity suppressed type
S1226-8BK,S1226-8BQ,etc Si photodiode 5.8 × 5.8 mm 190 to 1100 nm 0.5 A/W TO-8 For UV to near IR:

IR sensitivity suppressed type
S1227-1010BQ,S1227-1010BR,etc Si photodiode 10 × 10 mm 190 to 1100 nm 0.5 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-1010BQ,S1227-1010BR,etc Si photodiode 10 × 10 mm 340 to 1100 nm 0.62 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-16BQ,S1227-16BR,etc Si photodiode 5.9 × 1.1 mm 190 to 1100 nm 0.5 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-16BQ,S1227-16BR,etc Si photodiode 5.9 × 1.1 mm 340 to 1100 nm 0.62 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1337-21,S3204-08 Si photodiode 18 × 18 mm 190 to 1100 nm 0.52 A/W Ceramic (Unsealed) For UV to near IR:

IR sensitivity suppressed type
S1227-33BQ,S1227-33BR,etc Si photodiode 2.4 × 2.4 mm 190 to 1100 nm 0.5 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-33BQ,S1227-33BR,etc Si photodiode 2.4 × 2.4 mm 340 to 1100 nm 0.62 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-66BQ,S1227-66BR,etc Si photodiode 5.8 × 5.8 mm 190 to 1100 nm 0.5 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1227-66BQ,S1227-66BR,etc Si photodiode 5.8 × 5.8 mm 340 to 1100 nm 0.62 A/W Ceramic For UV to near IR:

IR sensitivity suppressed type
S1787-04 Si photodiode 2.8 × 2.4 mm 320 to 730 nm 0.3 A/W Plastic For visible range
S1787-08,S1787-12 Si photodiode 2.8 × 2.4 mm 320 to 1100 nm 0.58 A/W Plastic For visible range to near IR
S1787-08,S1787-12 Si photodiode 2.8 × 2.4 mm 320 to 1000 nm 0.35 A/W Plastic For visible range to near IR
S2281,S2281-01 Si photodiode φ11.3 mm 190 to 1100 nm 0.5 A/W With BNC connector UV to near IR:

UV sensivity enhanced type
S2281,S2281-01 Si photodiode φ11.3 mm 190 to 1000 nm 0.36 A/W With BNC connector For UV to near IR:

IR sensitivity suppressed type
S2281-04 Si photodiode φ7.98 mm 190 to 1100 nm 0.5 A/W With BNC connector UV to near IR:

UV sensivity enhanced type
S2386-18K Si photodiode 1.1 × 1.1 mm 320 to 1100 nm 0.6 A/W TO-18 For visible to near IR
S2386-18L Si photodiode 1.1 × 1.1 mm 320 to 1100 nm 0.6 A/W TO-18 For visible to near IR
S2386-44K,S2386-45K,etc Si photodiode 3.6 × 3.6 mm 320 to 1100 nm 0.6 A/W TO-5 For visible to near IR
S2386-44K,S2386-45K,etc Si photodiode 3.9 × 4.6 mm 320 to 1100 nm 0.6 A/W TO-5 For visible to near IR
S2386-44K,S2386-45K,etc Si photodiode 2.4 × 2.4 mm 320 to 1100 nm 0.6 A/W TO-5 For visible to near IR
S1226-8BK,S1226-8BQ,etc Si photodiode 5.8 × 5.8 mm 320 to 1100 nm 0.6 A/W TO-8 For visible to near IR
S2387-1010R Si photodiode 10 × 10 mm 340 to 1100 nm 0.58 A/W Ceramic For visible to near IR
S2387-130R,S2551 Si photodiode 29.1 × 1.2 mm 340 to 1100 nm 0.58 A/W Ceramic For visible to near IR
S2387-16R Si photodiode 5.9 × 1.1 mm 340 to 1100 nm 0.58 A/W Ceramic For visible to near IR
S2387-33R Si photodiode 2.4 × 2.4 mm 340 to 1100 nm 0.58 A/W Ceramic For visible to near IR
S2387-66R Si photodiode 5.8 × 5.8 mm 340 to 1100 nm 0.58 A/W Ceramic For visible to near IR
S2506-02 Si PIN photodiode 2.77 × 2.77 mm 320 to 1100 nm 0.48 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S2506-04,S6775-01 Si PIN photodiode 2.77 × 2.77 mm 760 to 1100 nm 0.56 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S2387-130R,S2551 Si photodiode 1.2 × 29.1 mm 340 to 1060 nm 0.6 A/W Ceramic UV to near IR:

UV sensivity enhanced type
S2592-03,S2592-04 Si photodiode 2.4 × 2.4 mm 190 to 1100 nm 0.5 A/W TO-8 TE-cooled type
S2592-03,S2592-04 Si photodiode 5.8 × 5.8 mm 190 to 1100 nm 0.5 A/W TO-8 TE-cooled type
S2744-08 Si PIN photodiode 20 × 10 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S2833-01 Si photodiode 2.4 × 2.8 mm 320 to 1100 nm 0.58 A/W Plastic For visible to near IR
S2833-04,S6931-01 Si photodiode 2.4 × 2.8 mm 320 to 1100 nm 0.58 A/W Plastic For visible to near IR
S3071 Si PIN photodiode φ5 mm 320 to 1060 nm 0.54 A/W TO-8 Cut-off frequency:
10 MHz to less than 100 MHz
S3072,S3399 Si PIN photodiode φ3 mm 320 to 1060 nm 0.54 A/W TO-5 Cut-off frequency:
10 MHz to less than 100 MHz
S1337-21,S3204-08 Si PIN photodiode 18 × 18 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S3072,S3399 Si PIN photodiode φ3 mm 320 to 1000 nm 0.58 A/W TO-5 Cut-off frequency:
100 MHz to less than 500 MHz
S3477-03,S3477-04 Si photodiode 2.4 × 2.4 mm 190 to 1100 nm 0.5 A/W TO-66 TE-cooled type
S3477-03,S3477-04 Si photodiode 5.8 × 5.8 mm 190 to 1100 nm 0.5 A/W TO-66 TE-cooled type
S3584-08 Si PIN photodiode 28 × 28 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S3588-08 Si PIN photodiode 30 × 3 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S3590-08,S3590-09,etc Si PIN photodiode 10 × 10 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S3590-08,S3590-09,etc Si PIN photodiode 10 × 10 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S3590-08,S3590-09,etc Si PIN photodiode 10 × 10 mm 340 to 1100 nm 0.65 A/W Ceramic Large active area Si PIN photodiode
S3590-08,S3590-09,etc Si PIN photodiode 10 × 10 mm 340 to 1100 nm 0.58 A/W Ceramic Large active area Si PIN photodiode
S3759 Si PIN photodiode φ5 mm 360 to 1120 nm 0.7 A/W TO-8 For YAG laser detection
S3883 Si PIN photodiode φ1.5 mm 320 to 1000 nm 0.58 A/W TO-5 Cut-off frequency:
100 MHz to less than 500 MHz
S3994-01 Si PIN photodiode 10 × 10 mm 320 to 1100 nm 0.65 A/W Ceramic Violet and blue sensitivity enhanced type
S4011-06DS Si photodiode 1.3 × 1.3 mm 320 to 1100 nm 0.58 A/W Plastic For visible to near IR
S4707-01 Si PIN photodiode 2.4 × 2.8 mm 320 to 1100 nm 0.6 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S4797-01 Si photodiode 1.3 × 1.3 mm 320 to 1000 nm 0.4 A/W Plastic For visible to near IR
S5106 Si PIN photodiode 5 × 5 mm 320 to 1100 nm 0.72 A/W Ceramic High-speed response Si PIN photodiode
S5107 Si PIN photodiode 10 × 10 mm 320 to 1100 nm 0.72 A/W Ceramic High-speed response Si PIN photodiode
S5627-01 Si photodiode 1.3 × 1.3 mm 320 to 840 nm 0.3 A/W Plastic For visible
S5821 Si PIN photodiode φ1.2 mm 320 to 1100 nm 0.52 A/W TO-18 Cut-off frequency:
10 MHz to less than 100 MHz
S5821-01 Si PIN photodiode φ1.2 mm 320 to 1100 nm 0.52 A/W TO-18 Cut-off frequency:
10 MHz to less than 100 MHz
S5821-02 Si PIN photodiode φ1.2 mm 320 to 1100 nm 0.52 A/W TO-18 Cut-off frequency:
10 MHz to less than 100 MHz
S5821-03 Si PIN photodiode φ1.2 mm 320 to 1100 nm 0.52 A/W TO-18 Cut-off frequency:
10 MHz to less than 100 MHz
S5971 Si PIN photodiode φ1.2 mm 320 to 1060 nm 0.55 A/W TO-18 Cut-off frequency:
100 MHz to less than 500 MHz
S5972 Si PIN photodiode φ0.8 mm 320 to 1000 nm 0.55 A/W TO-18 Cut-off frequency:
500 MHz to less than 1 GHz
S5973,S5973-02 Si PIN photodiode φ0.4 mm 320 to 1000 nm 0.51 A/W TO-18 Cut-off frequency:
1 GHz or more
S5973-01 Si PIN photodiode φ0.4 mm 320 to 1000 nm 0.51 A/W TO-18 Cut-off frequency:
1 GHz or more
S5973,S5973-02 Si PIN photodiode φ0.4 mm 320 to 1000 nm 0.42 A/W TO-18 Cut-off frequency:
1 GHz or more
S6036 Si PIN photodiode φ7 mm 320 to 1100 nm 0.56 A/W Plastic with lens Cut-off frequency:
10 MHz to less than 100 MHz
S6775,S6967 Si PIN photodiode 5.5 × 4.8 mm 320 to 1100 nm 0.55 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S2506-04,S6775-01 Si PIN photodiode 5.5 × 4.8 mm 700 to 1100 nm 0.68 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S6801-01 Si PIN photodiode φ14 mm 700 to 1100 nm 0.55 A/W Plastic with lens Cut-off frequency:
10 MHz to less than 100 MHz
S2833-04,S6931-01 Si photodiode 2.4 × 2.8 mm 320 to 1000 nm 0.48 A/W Plastic For visible to near IR
S6775,S6967 Si PIN photodiode 5.5 × 4.8 mm 320 to 1060 nm 0.65 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S7478 Si PIN photodiode 5 × 5 mm 320 to 1100 nm 0.72 A/W Plastic High-speed response Si PIN photodiode
S7509 Si PIN photodiode 10 × 2 mm 320 to 1100 nm 0.72 A/W Ceramic High-speed response Si PIN photodiode
S7510 Si PIN photodiode 11 × 6 mm 320 to 1100 nm 0.72 A/W Ceramic High-speed response Si PIN photodiode
S7686 Si photodiode 2.8 × 2.4 mm 480 to 660 nm 0.38 A/W Ceramic For visible
S8193 Si photodiode 5.8 × 5.8 mm -- -- Ceramic With scintillator
S8265 Si photodiode 2.8 × 2.4 mm 340 to 720 nm 0.3 A/W Ceramic For visible
S8385 Si PIN photodiode 2 × 2 mm 320 to 1100 nm 0.48 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S8385-04,S8729-04 Si PIN photodiode 2 × 2 mm 760 to 1100 nm 0.56 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S8552 Si photodiode 10 × 10 mm -- 0.06 A/W Ceramic (Unsealed) For excimerlaser detection
S8553 Si photodiode 18 × 18 mm -- 0.06 A/W Ceramic (Unsealed) For excimerlaser detection
S8559 Si photodiode 5.8 × 5.8 mm -- -- Ceramic With scintillator
S8650 Si PIN photodiode 10 × 10 mm 340 to 1100 nm 0.66 A/W Ceramic Large active area Si PIN photodiode
S8729 Si PIN photodiode 2 × 3.3 mm 320 to 1100 nm 0.55 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S8385-04,S8729-04 Si PIN photodiode 2 × 3.3 mm 760 to 1100 nm 0.68 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S8729-10 Si PIN photodiode 2 × 3.3 mm 320 to 1100 nm 0.55 A/W Plastic Cut-off frequency:
10 MHz to less than 100 MHz
S8745-01 Si photodiode with preamp 2.4 × 2.4 mm 190 to 1100 nm -- TO-5 With preamp for measurement
S8746-01 Si photodiode with preamp 5.8 × 5.8 mm 190 to 1100 nm -- TO-8 With preamp for measurement
S9055,S9055-01 Si PIN photodiode φ0.2 mm 320 to 1000 nm 0.25 A/W TO-18 Cut-off frequency:
1 GHz or more
S9055,S9055-01 Si PIN photodiode φ0.1 mm 320 to 1000 nm 0.25 A/W TO-18 Cut-off frequency:
1 GHz or more
S9195 Si PIN photodiode 5 × 5 mm 320 to 1000 nm 0.28 A/W TO-8 Violet and blue sensitivity enhanced type
S9219 Si photodiode φ11.3 mm 380 to 780 nm 0.24 A/W With BNC connector For visible
S9219-01 Si photodiode 3.6 × 3.6 mm 380 to 780 nm 0.22 A/W TO-5 For visible
S9269 Si photodiode with preamp 5.8 × 5.8 mm 320 to 1100 nm -- Ceramic With preamp for measurement
S9270 Si photodiode with preamp 10 × 10 mm 320 to 1100 nm -- Ceramic With preamp for measurement
S9295 Si photodiode with preamp 10 × 10 mm 190 to 1100 nm -- Metal With preamp for measurement
S9295-01 Si photodiode with preamp 10 × 10 mm 190 to 1100 nm 5.1 A/W Metal With preamp for measurement
S9674 Si photodiode 2 × 2 mm 320 to 1100 nm 0.7 A/W Glass epoxy For automotive
S10043 Si photodiode 10 × 10 mm 190 to 1000 nm 0.015 A/W Ceramic (Unsealed) For excimerlaser detection
S10355-01 Si photodiode 7.05 × 7.05 mm 400 to 1100 nm 0.6 A/W CSP CSP (Chip Size Package)type
S10356-01,S10357-01 Si photodiode 2.5 × 2.5 mm 400 to 1100 nm 0.59 A/W CSP CSP (Chip Size Package)type
S10625-01CT Si photodiode 1.3 × 1.3 mm 320 to 1100 nm 0.54 A/W Glass epoxy small package type
S10783 Si PIN photodiode φ0.8 mm 330 to 1040 nm 0.52 A/W Plastic Cut-off frequency:
100 MHz to less than 500 MHz
S10784 Si PIN photodiode φ3.0 mm 340 to 1040 nm 0.51 A/W Plastic with lens Cut-off frequency:
100 MHz to less than 500 MHz
S10993-02CT Si PIN photodiode 1.06 × 1.06 mm 380 to 1100 nm 0.6 A/W Glass epoxy Cut-off frequency:
5 MHz to less than 100 MHz
S11141-10 Si photodiode 10 x 10 mm -- -- -- For electron beam detector
S11142-10 Si photodiode 14 x 14 mm -- -- -- For electron beam detector
S11499 IR-enhanced Si PIN photodiode φ3 mm 360 to 1140 nm 0.6 A/W TO-5 IR-enhanced type
S11499-01 IR-enhanced Si PIN photodiode φ5 mm 360 to 1140 nm 0.6 A/W TO-8 IR-enhanced type
S12028 IR-enhaned Si PIN photodiode φ1.2 mm 360 to 1140 nm 0.5 A/W TO-18 IR-enhanced type
S12158-01CT Si PIN photodiode 2.77 × 2.77 mm 320 to 1100 nm 0.7 A/W Glass epoxy Cut-off frequency:
10 MHz to less than 100 MHz
S12271 Si PIN photodiode φ4.1 mm 190 to 1100 nm 0.5 A/W TO-8 Cut-off frequency:
10 MHz to less than 100 MHz
S1226-18BK,S1226-18BQ,etc Si photodiode 1.1 × 1.1 mm 190 to 1000 nm 0.38 A/W TO-18 For UV to near IR:

IR sensitivity suppressed type
S1226-44BK,S1226-44BQ,etc Si photodiode 2.4 × 2.4 mm 190 to 1000 nm 0.38 A/W TO-5 For UV to near IR:

IR sensitivity suppressed type
S1226-8BK,S1226-8BQ,etc Si photodiode 5.8 × 5.8 mm 190 to 1000 nm 0.38 A/W TO-8 For UV to near IR:

IR sensitivity suppressed type
S12742-254,S2684-254 Si photodiode 3.6 × 3.6 mm 252 to 256 nm 0.018 A/W TO-5 For monochromatic light detection

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