G11475-256WBInGaAs linear image sensor


Datasheet [267 KB/PDF]

Near infrared sensors (0.9 to 1.85 μm)


G11475 to G11478 series is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. These linear image sensors consist an InGaAs photodiode array and charge amplifiers, offset compensation circuit, shift register, and timing generator formed on a CMOS chip. Charge amplifiers are configured with CMOS transistor array and are connected to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read in charge integration mode, high sensitivity and stable operation are attained in the near infrared region. These sensors feature higher data rates and better linearity characteristics at high gain than the previous products. The package is hermetically sealed providing excellent reliability. The signal processing circuit on the CMOS chip enables the selection of a conversion efficiency (CE) from the available two types using external voltage.


- Low noise, low dark current
- Selectable from two conversion efficiency types
- Built-in saturation countermeasure circuit
- Built-in CDS circuit
- Built-in thermistor
- compensation circuit
- Easy operation (built-in timing generator)


Image size 12.8 x 0.25 mm
Pixel size 50 x 250 μm
Pixel pitch 50 μm
Number of total pixels 256 pixels
Package Metal
Cooling Two-stage TE-cooled
Line rate (max.) 17200 lines/s
Spectral response range 900 to 1850 nm
Dark current (max.) 20 pA
Measurement condition Typ. Ta=25 ℃, unless otherwise noted Tchip=-20℃

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Spectral response


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Dimensional outline (unit: mm)


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