G14006-512DEInGaAs linear image sensor

G11135-512DE,G11620-256DA,etc

Datasheet [294 KB/PDF]

Single video line (512 pixels) near infrared image sensor (1.12 to 1.9 μm)

 

The G14006-512DE InGaAs linear image sensor was designed for foreign object inspection equipment. The linear image sensor consists of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit, a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium bumps. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.

 

Features
- Single video line (512 pixels)
- High-speed data rate: 5 MHz max.
- Choice of two conversion efficiency levels
- Pixel size: 25 × 25 μm
- Built-in temperature sensor
- Small variations in linearity between pixels
- Room temperature operation

Specifications

Image size 12.8 x 0.025 mm
Pixel size 25 x 25 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Ceramic
Cooling Non-cooled
Line rate (max.) 8150 lines/s
Spectral response range 1120 to 1900 nm
Dark current (max.) ±10 pA
Measurement condition Typ. Ta=25 ℃, unless otherwise noted

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Spectral response

k_g11135-512de_sr_xx.jpg

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Dimensional outline (unit: mm)

k_g11135-512de_do_xx.jpg

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Disclaimer
 [66KB/PDF]

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