S11501-1007SIR-enhanced CCD area image sensor


Datasheet [589 KB/PDF]

Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD


The S11501-1007S is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the back side of the CCD. This allows the S11501-1007S to have much higher sensitivity than our previous product (S7031-1007S). In addition to having high near infrared sensitivity, the S11501-1007S can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S11501-1007S is pin compatible with the S7031-1007S, and so operates under the same drive conditions.


- Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
- Pixel size: 24 × 24 um
- Line, pixel binning
- MPP operation


Type IR-enhanced type
Image size 24.576 x 2.928 mm
Pixel size 24 x 24 μm
Pixel pitch 24 μm
Number of effective pixels 1024 x 122 pixels
Package Metal
Line rate (typ.) 160 line/s
Line rate (max.) 387 line/s
Spectral response range 200 to 1100 nm
Saturation charge vertical (typ.) 320 ke-
Dark current (typ.) 100 e-/pixel/s
Readout noise (typ.) 8 e- rms
Dedicated driver circuit C7041
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, frame rate: full line binning,Dark current: MPP mode

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Spectral response


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Dimensional outline (unit: mm)


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