Hamamatsu adds uncooled high-speed & high-sensitivity InAsSb device (3 to 11 μm) to infrared detector lineup
Hamamatsu, Japan – January 12, 2017 – Hamamatsu Photonics K.K. has developed an uncooled InAsSb (indium arsenide antimonide) photovoltaic detector that offers high-speed and high-sensitivity detection of infrared light in the 3 to 11 micron wavelength range. This new device (part number: P13894-011MA) extends the upper limit of sensitivity of Hamamatsu’s InAsSb detectors from 8 microns to 11 microns, which will enable users to measure molecules that absorb longer wavelengths of light and thus analyze more compounds with a single device.
The P13894-011MA will be available to manufacturers of environmental monitoring systems from January 16, 2017. From January 31 to February 2, the P13894-011MA will be on display as part of Hamamatsu’s exhibit at the SPIE Photonics West conference in San Francisco, California.