Semiconductor failure analysis systems utilizing IR-OBIRCH method that detects the electrical changes caused by heat generated by an infrared laser beam.

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iphemos-mp product photo

iPHEMOS-MP Inverted emission microscope: C10506-04-16

  • Multiple detector
  • High NA macro lens

Inverted emission microscope for analyzing semiconductor wafers from the backside. It incorporates specially designed high NA macro lens for emission analysis.

phemos-1000 product photo

PHEMOS-1000 Emission microscope: C11222-16

  • IR laser confocal microscope
  • High resolution CCD

High resolution emission microscope with IR laser confocal microscope. It can be customized upon request.

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