Monitoring systems for the plasma emissions in real time, and the camera systems to measurement of plasma utilizing the high speed gate operation.

Plasma process monitor

Plasma-process monitor

Plasma process monitors to monitor plasma emissions during its semiconductor manufacturing processes such as etching, sputtering and CVD.

Multiband plasma-process monitor: C10346-01

    • 200 nm to 950 nm

    Plasma process monitor to monitor multipoints of plasma emissions (200 nm to 950 nm) in real time.

    Multiband plasma-process monitor: C10346-02

      • 300 nm to 800 nm

      Plasma process monitor to monitor multipoints of plasma emissions (300 nm to 800 nm) in real time.

      Gated ICCD cameras

      Gated ICCD cameras

      High sensitivity cameras capable of high speed gate operation to capture images of transient phenomena.

      Gated ICCD camera: C11370-10-1

        • ICCD

        High resolution model. Spectral response characteristics: 160 nm to 900 nm, Minimum gate time: 5 ns

        Gated ICCD camera: C11370-11-2

          • ICCD

          DIC operation model. Spectral response characteristics: 185 nm to 850 nm, Minimum gate time: 10 ns

          Gated ICCD camera: C11370-20-1

            • ICCD

            High sensitibity in NIR range model. Spectral response characteristics: 370 nm to 920 nm, Minimum gate time: 5 ns

            Gated ICCD camera: C11370-30-1

              • ICCD

              High sensitivity in visible range model. Spectral response characteristics: 286 nm to 720 nm, Minimum gate time: 5 ns

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