Si photodiode (148)

S2387-66RSi photodiode

k_s2387-66r_pp_xx.jpg

Datasheet [646 KB/PDF]

For visible to IR, general-purpose photometry

 

 

Features
- High sensitivity in visible to infrared range
- Low dark current
- High linearity

Specifications

Photosensitive area 5.8 × 5.8 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.58 A/W
Dark current (max.) 50 pA
Rise time (typ.) 10 μs
Terminal capacitance (typ.) 4300 pF
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

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Spectral response

k_s2387-1010r_sr_xx.jpg

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Dimensional outline (unit: mm)

k_s2387-66r_do_xx.jpg

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