Hamamatsu, Japan – February 25, 2009 – Hamamatsu Photonics K.K. has successfully developed a high-power DFB-type laser diode with 3 kW output, narrow spectral range, and low temperature dependence as a pumping source for industrial semiconductor lasers. This new type of high-power laser diode will make it possible to achieve higher output, higher performance, and higher stability in laser equipment such as YAG lasers and fiber lasers. It is also expected to help reduce the cost of such equipment.
To meet the various challenges of manufacturing a high-power laser diodes with DFB (distributed feedback) structure, Hamamatsu has developed a new fabrication process for such devices. The result is a 3 kW DFB-type laser diode that has a much narrower output spectrum (1/5th) and less temperature dependence (72% less) than conventional Fabry Perot laser diodes. In terms of commercial products, a 1 kW version of the new laser diode is scheduled for release this spring. This will be followed by versions with other output levels.
Hamamatsu's new high-power DFB-type laser diode technology will be exhibited at the company's Photon Fair 2009 event from February 26 to 28 at the ACT City Hamamatsu convention center.
