Hamamatsu, Japan – January 13, 2010 – Hamamatsu Photonics K.K. has developed the world’s first commercially available IR-enhanced silicon photodiodes with greater sensitivity in the near-infrared region from 950 nm to 1100 nm than conventional silicon photodiodes. The enhanced infrared sensitivity is achieved through the use of Hamamatsu’s proprietary laser processing technology to produce sensitivity-boosting microstructures on the silicon surface. This technology will allow Hamamatsu to mass produce various types of inexpensive and easy-to-use silicon detectors with enhanced infrared
sensitivity. Application areas are expected to include security, optical communications, thermal measurement, and fluorescence photometry.
The new IR-enhanced silicon detectors will be exhibited by Hamamatsu at the upcoming SPIE Photonics West event (San Francisco, California) from January 26 to 28. Please visit booth 1413 for more information.
