Go to Language SelectorGo to Global NavigationGo to Sub NavigationGo to ContentGo to Site Information

Hamamatsu Photonics
Home  |  Site Map  |  Contact
Language Selector English Japanese

Global Navigation
About Hamamatsu Investors Select Country/Region
ここからサブナビゲーションです



News

Content

Hamamatsu Photonics Introduces New Infrared Image Sensors with Flip Chip Packaging


Jan 21, 2010

Hamamatsu, Japan – January 21, 2010 – Hamamatsu Photonics K.K. has developed its own MEMS-based flip chip packaging technology for creating heterojunction optoelectronic devices such as compound semiconductor photodiode arrays that are bump-bonded to silicon CMOS signal processing circuitry. The first commercial products to come from this new packaging technology will be high-performance, infrared-sensitive InGaAs image sensors that are more compact and less expensive than conventional InGaAs image sensors.

Sample deliveries of the new InGaAs image sensors are scheduled to begin in April. The products will be available to Japan-based and international manufacturers of measurement and analytical instruments.

From January 26 to 28, Hamamatsu will exhibit the new InGaAs image sensors at the SPIE Photonics West event (San Francisco, CA). Please visit booth 1413 for more information.


1.7um 512ch InGaAs image sensors (G11135-512DA)

1.7um 512ch
InGaAs image sensors (G11135-512DA)
1.7um 64x64ch InGaAs image sensors (G11097-0606S)

1.7um 64x64ch
InGaAs image sensors (G11097-0606S)






Hamamatsu Photonics K.K
Site Information Terms of Use Privacy Policy Help
Copyright © Hamamatsu Photonics K.K. All Rights Reserved.