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Hamamatsu Photonics has developed an InGaAs area image sensor for hyperspectral cameras capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of area image sensor.
We start accepting product orders from July 1, 2019.

By applying compound opto-semiconductor manufacturing technology fostered in-house over many years, we designed and developed a new area image sensor G14674-0808W made of indium gallium arsenide (InGaAs) capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of area image sensor. Installing this new InGaAs image sensor into hyperspectral cameras for plastic recycling will boost the plastic recycling rate since hyperspectral cameras can screen and sort plastics containing flame-retardant resin to separate them out from other plastics, which has been extremely difficult up till now. We start accepting product orders from domestic and overseas industrial camera manufacturers on July 1, 2019.
This new InGaAs image sensor will be on display at the IMAGE SENSING SHOW 2019 held in Pacifico Yokohama for 3 days from June 12 to June 14, where domestic and overseas manufacturers and experts in image processing devices and sensing technology gather to show off and check out new technology.

Main product features

1. InGaAs area image sensor capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of image sensor

Utilizing equipment newly installed in our Miyakoda Factory Building No. 3, we optimized the composition ratio of InAs and GaAs contained in the InGaAs photosensitive area and meticulously reviewed and rethought the photosensitive area manufacturing process. The result is a successful elimination of defects in the photosensitive area and development of an InGaAs area image sensor capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of image sensor.
 

2. Reduced dark current in photosensitive area

We designed and produced in-house a circuit optimized for the new InGaAs area image sensor and succeeded in employing a circuit design that brings to nearly zero the difference between voltages applied to electrodes in the photosensitive area. This minimizes the dark current generated in the photosensitive area.
 

3. Improved signal readout speed

To shorten the path for transmitting electrical signals, we also miniaturized the circuit that we designed, produced and optimized in-house for the new InGaAs area image sensor. This shorter signal path increases signal readout speed to more than twice that of current products.
 

Lineup

Hamamatsu will simultaneously release four new products with different spectral response ranges including the G14674-0808W with sensitivities up to 2.55 μm.

Type no. Spectral response range Number of total pixels Pixel pitch Cooling Dark current Frame rate
NEW G14671-0808W 0.95 ~ 1.69 μm
(15 ℃)
320 × 256 pixels 20 μm Two-stage TE-cooled 0.03 pA 507 fps max.
NEW G14672-0808W 1.12 ~ 1.85 μm
(-20 ℃)
0.3 pA
NEW G14673-0808W 1.30 ~ 2.15 μm
(-20 ℃)
3 pA
NEW G14674-0808W 1.70 ~ 2.55 μm
(-20 ℃)
30 pA

Spectral response

For more information, please contact us.