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Hamamatsu is the first in the world to succeed in mass-producing a compound opto-semiconductor that detects mid-infrared light to a wavelength of 14.3 μm without using hazardous substances restricted under the RoHS directive.
Sales of this new compound opto-semiconductor begins September 2, 2019.

By utilizing compound opto-semiconductor manufacturing technology developed in-house over many years, we are the first in the world to succeed in mass-producing a compound opto-semiconductor (Type-II superlattice infrared detector)* not containing harmful mercury (Hg) and cadmium (Cd) but able to detect mid-infrared light to a wavelength of 14.3 micrometers (a micrometer, abbreviated μm, is one millionth of a meter). Mercury and cadmium are common materials used for mid-infrared detectors but are restricted substances under the RoHS directive issued by EU that prohibits use of certain hazardous substances in electrical and electronic products sold in the EU market. So our new product will likely replace currently available mid-infrared detectors that contain restricted substances. Our new product will prove ideal for analytical instruments that rely on mid-infrared light to identify substances contained in the air, foods, and drugs. We start selling this new product to domestic and overseas analytical instrument manufacturers on September 2, 2019.
Our new product will be on display at the JASIS 2019 exhibition held in Makuhari Messe for 3 days from September 4 to 6. This is Asia’s largest exhibition of the latest in analytical and scientific instruments.
 

*Type-II superlattice infrared detector is a compound opto-semiconductor with a unique structure composed of thin films of two different materials alternately laminated on a substrate to form a photosensitive layer.

Features

1) Mass production of infrared detectors that can detect up to 14.3 µm

In the epitaxial growth process, the amount and timing of supplying InAs and GaSb to the substrate is precisely controlled, and the production conditions such as temperature and pressure have been optimized. As a result, a production technique for accurately layering thin film with uniform thickness on a substrate has been established, making it possible to mass-produce Type-II superlattice infrared detector with a cutoff wavelength of 14.3 μm.
 

2) Free of substances restricted by the RoHS directive

This product does not use mercury or cadmium, which are substances restricted by the RoHS directive. Therefore, replacements of current photosensors (which are integrated into analytical instruments that use mid-infrared light) that include substances restricted by the RoHS directive by this product can be expected.
 

Main specifications

(Tchip = -196℃)

Parameter NEW P15409-901 Unit
Photosensitive area Φ0.1 mm
Cutoff wavelength 14.3 μm
Detectivity 1.6 × 1010 cm・Hz1/2/W
Photosensitivity 2.6 A/W

For more information, please contact us.