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Photonic crystal surface emitting laser diode (PCSEL)

L13395-04

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This product is a surface-emitting semiconductor laser with a photonic crystal structure that features a narrow spot beam pattern (narrow beam spread angle, circular shape) and a narrow spectral linewidth. The photonic crystal is an optical nanostructure having a periodic refractive index distribution with dimensions nearly equal to the light wavelengths. In this product, light is amplified and diffracted by the photonic crystal mounted in the vicinity of a light amplification layer called an active layer, and the amplified light is output as a laser beam in a direction perpendicular to the surface. Even with a large area, this laser allows a stable resonance action and so delivers a high quality beam with a narrow radiant angle.

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Specifications

Type number L13395-04
Oscillation mode CW
Operating temperature 0 ℃ to +30 ℃
Storage temperature -30 ℃ to +85 ℃
Peak emission wavelength typ. 940 nm
Radiant output power max. 200 mW
Radiant output power typ. 150 mW
Operating current max. 850 mA
Spectral radiation half bandwidth max. 1 nm
Operating voltage max. 2 V
Emitting area 200 × 200 μm
Beam spread angle (Horizontal) max. 1 °
Beam spread angle (Vertical) max. 1 °
Lasing threshold current typ. 250 mA
Package φ9.0 CD

*Example of temperature characteristic of peak emission wavelength (condition: 940 nm, 25 ℃)

Radiant output power vs. Operating current (typ.)

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Typical emission spectrum

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Directivity (typ.)

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Dimensional outline (unit: mm)

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