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InAsSb photovoltaic detector



Infrared detector in the 5 μm spectral band, with high sensitivity and high reliability

The P11120-901 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal growth technology. The InAsSb photodiode used in the detector has a planar structure that ensures high-speed response and high reliability. Typical applications include gas analysis such as CO2, SOx, CO and NOx. HAMAMATSU also manufactures detector elements with peak sensitivity at longer wavelengths by changing the composition ratio of As and Sb.

-High-speed response
-High sensitivity
-High reliability

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Photosensitive area φ1 mm
Number of elements 1
Package category Side-on
Package Metal dewar
Cooling Liquid nitrogen
Cutoff wavelength (typ.) 5.8 μm
Peak sensitivity wavelength (typ.) 4.8 μm
Photosensitivity (typ.) 0.8 A/W
Detectivity D* (typ.) 8.5×1010 cm・Hz1/2/W
Noise equivalent power (typ.) 1.1×10-12  W/Hz1/2
Rise time (typ.) 0.2 μs
Measurement condition Td=-196℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response


Dimensional outline (unit: mm)


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