IR-enhanced CCD area image sensor
The S11511 series is a family of FFT (full frame transfer)-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Forming a MEMS structure on the back side of the CCD allows the S11510 series to have much higher sensitivity than our previous products (S11850 series). In addition to having high infrared sensitivity, the S11510 series can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Bin-ning operation also ensures even higher S/N and signal processing speed compared to methods that use an external cir-cuit to add signals digitally. In addition, a TE-cooler is built into the package to keep the element temperature constant (approx. 5 °C) during operation. The S11511 series is pin compatible with the S11850-1106, and so operates under the same drive conditions.
|Image size||28.672 x 0.896 mm|
|Number of effective pixels||2048 x 64 pixels|
|Pixel size||14 x 14 μm|
|Spectral response range||200 to 1100 nm|
|Line rate (typ.)||106 lines/s|
|Line rate (max.)||200 line/s|
|Dark current (typ.)||50 e-/pixel/s|
|Readout noise (typ.)||6 e- rms|
|Dedicated driver circuit||C11860|
|Measurement condition||Typ. Ta=25 ℃, unless otherwise noted, frame rate: full line binning|
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