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Si photodiode



Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR

The S3477-03 combines a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making this sensor suitable for low-light-level detection where a high S/N is required. The S3477-03 is hermetically sealed in a TO-66 package.

- High S/N
- High UV sensitivity
- Built-in thermistor allows stable operation

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Photosensitive area 2.4 × 2.4 mm
Number of elements 1
Package Metal
Package category TO-66
Cooling TE-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 38 pA
Rise time (typ.) 0.2 μs
Terminal capacitance (typ.) 65 pF
Noise equivalent power (typ.) 8.1×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity:λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, λ=λp, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

Spectral response


Dimensional outline (unit: mm)


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