Si photodiode


For visible to infrared precision photometry

The S2551 is a Si photodiode having a long photosensitive area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry.

- Long, narrow photosensitive area: 1.2 × 29.1 mm
- High sensitivity
- Low capacitance

Photosensitive area 1.2 × 29.1 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 340 to 1060 nm
Peak sensitivity wavelength (typ.) 920 nm
Photosensitivity (typ.) 0.57 A/W
Dark current (max.) 1000 pA
Rise time (typ.) 1.4 μs
Terminal capacitance (typ.) 350 pF
Noise equivalent power (typ.) 3.9×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=920 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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