InGaAs linear image sensor
The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-number pixels and even-number pixels.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.
Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.
|Image size||6.4 x 0.5 mm|
|Pixel size||50 x 500 μm|
|Pixel pitch||50 μm|
|Number of total pixels||128 pixels|
|Line rate (max.)||30800 lines/s|
|Spectral response range||950 to 1700 nm|
|Dark current (max.)||5 pA|
|Measurement condition||unless otherwise noted, Typ. Ta=25 ℃,Vdd=5 V,INP,Vinp=PDN=4 V,Fvref=1.2V,Vφ=5V,f=1 MHz|
Certain type of cookies may require the data subject’s consent before storing them on the computer.
This website uses two types of cookies:
There are two ways to manage cookie preferences.
You may opt-out of Google Analytics cookies by the websites provided by Google:
We inform you that in such case you will not be able to wholly use all functions of our website.