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IR-enhanced CCD area image sensor



Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

The S11510-1006 is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Forming a MEMS structure on the back side of the CCD allows the S11510-1006 to have much higher sensitivity than our previous products (S10420-01 series). In addition to having high infrared sensitivity, the S11510-1006 can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S11510-1006 is pin compatible with the S10420-01 series, and so operates under the same drive conditions.

- Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
- High CCD node sensitivity: 6.5 uV/e-
- High full well capacity and wide dynamic range
- Pixel size: 14 × 14 μm
- MPP operation

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Type Binning type
IR-enhanced type
Image size 14.336 x 0.896 mm
Number of effective pixels 1024 x 64 pixels
Pixel size 14 x 14 μm
Spectral response range 200 to 1100 nm
Line rate (typ.) 189 lines/s
Line rate (max.) 341 line/s
Dark current (typ.) 50 e-/pixel/s
Readout noise (typ.) 6 e- rms
Cooling Non-cooled
Package Ceramic
Dedicated driver circuit C11287
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, frame rate: full line binning

Spectral response


Dimensional outline (unit: mm)


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