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IR-enhanced CCD area image sensor



Enhanced near-infrared sensitivity, constant element temperature control

The S11511 series is a family of FFT (full frame transfer) CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Forming a MEMS structure on the back side of the CCD allows the S11511 series to have much higher sensitivity than our previous products (S11850 series). In addition to having high infrared sensitivity, the S11511 series can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. In addition, a TE-cooler is built into the package to keep the element temperature constant (approx. 5 °C) during operation. The S11511 series is pin compatible with the S11850-1106, and so operates under the same drive conditions.

- NIR high sensitivity: QE=40% (λ=1000 nm)
- One-stage TE-cooled type (element temperature: approx. 5 °C)
- High CCD node sensitivity: 6.5 uV/e-
- High full well capacity and wide dynamic range (with anti-blooming function)
- Pixel size: 14 × 14 μm
- MPP operation

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Type Binning type
IR-enhanced type
Image size 14.336 x 0.896 mm
Number of effective pixels 1024 x 64 pixels
Pixel size 14 x 14 μm
Spectral response range 200 to 1100 nm
Line rate (typ.) 189 lines/s
Line rate (max.) 341 line/s
Dark current (typ.) 50 e-/pixel/s
Readout noise (typ.) 6 e- rms
Cooling One-stage TE-cooled
Package Metal
Dedicated driver circuit C11860
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, frame rate: full line binning

Spectral response


Dimensional outline (unit: mm)


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