Hamamatsu offers a wide range of devices for UV, visible, and infrared as well as X-ray and high-energy detection.

The catalogs below introduce Si devices with advantageous features for UV and near infrared applications.
We have types of silicon detectors that achieve high sensitivity in the UV or near infrared region, and other types with high resistance against UV damage.

Please download the catalogs to select suitable products for your applications.

Lineup catalog

Hamamatsu Si devices with advantages for UV and near infrared detection

1. High sensitivity

General Si devices can detect UV light or near infrared light, but their sensitivity is low.
However, Hamamatsu manufactures Si products that are highly sensitive to UV and near infrared, by adopting a unique chip structure and processing technology.

■ Spectral response

High sensitivity in UV region

High sensitivity in near infrared region

2. High resistance

Resin is generally used in silicon sensors as adhesives in window materials and chips, but the resin is prone to outgassing and deteriorates the chip’s sensitivity.
Hamamatsu uses a resin-free package to reduce outgassing and produce silicon sensors with high resistance to UV light exposure.

■ Change of spectral sensitivity due to UV irradiation

3. Customization

Hamamatsu has established an integrated production system in our own factory, from the design to the assembly and inspection of optical semiconductor devices.
This is why we are flexible and offer products customized according to customers’ requests.
Customization examples include adding filters on window materials, tiling chips into 1D or 2D arrays, segmenting a detector’s photosensitive area,
changing the package shape, and adding an electronic cooling element.

Example of product with filter

Example of product with segmented photosensitive area

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