Si PIN photodiode


Si PIN photodiode for visible to infrared photometry

The S3759 is a Si PIN photodiode developed to detect and measure infrared energy emitted from YAG lasers (1.06 μm). Compared to standard Si photodiodes, the S3759 delivers exceptionally high sensitivity of 0.38 A/W at 1.06 μm. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as φ5 mm, making optical axis alignment easier.

-High sensitivity in infrared region: 0.38 A/W (λ=1.06 μm)
-High-speed response: tr=12.5 ns (VR=100 V)
-Low capacitance: Ct=10 pF (VR=100 V)
-Large active area: φ5 mm
-High reliability: TO-8 metal package

Photosensitive area φ5 mm
Number of elements 1
Package Metal
Package category TO-8
Cooling Non-cooled
Spectral response range 360 to 1120 nm
Peak sensitivity wavelength (typ.) 980 nm
Photosensitivity (typ.) 0.7 A/W
Dark current (max.) 10000 pA
Terminal capacitance (typ.) 10 pF
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=1060 nm, Dark current: VR==100 V, Terminal capacitance: VR=100 V, f=1 MHz, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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