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HyperGauge Thickness measurement system
C17319-11
Measure thickness distribution of a 300 mm wafer in only 5 seconds
The HyperGauge Thickness measurement system C17319-11 employs a spectroscopic interference method for precise film thickness measurement. Equipped with the λ-Capture® technology, which detects wavelength shifts using high-sensitivity cameras without a spectrometer, it can measure the entire film thickness of up to 300 mm wafers in as little as 5 seconds.
λ-Capture is a patented wavelength detection technology developed by Hamamatsu Photonics.
Snapshot of in-plane thickness distribution
Compared to point sensor systems, HyperGauge Thickness measurement system C17319-11 delivers dramatically faster acquisition of thickness distribution. Combining high resolution with excellent measurement repeatability, the system achieves the accuracy required for inspecting not only bare wafers but also patterned wafers.
Acquire thickness distribution in only 5 seconds
By adopting Hamamatsu’s proprietary wavelength detection technology, λ-Capture, combined with high-sensitivity cameras, the system enables area-based thickness measurement. It captures the in-plane thickness distribution of wafers up to 300 mm in diameter in as little as 5 seconds. Since the entire wafer surface is imaged at once, it simplifies measurement point selection and alignment compared to point sensor systems.
Boost productivity with fast uniformity measurement
In semiconductor manufacturing processes, variations in film thickness can occur on wafers due to factors such as pin temperature inside the chamber. These thickness non-uniformities negatively affect product quality, making it essential to equalize film thickness between process steps. With point sensor systems, the number of measurement points is limited by time constraints, making it difficult to fully capture in-plane thickness distribution. By adopting an area-based approach, our system measures in-plane thickness distribution from approximately 750 000 points in only 5 seconds. This enables shorter process times for improved productivity and better yield through comprehensive thickness distribution analysis. Fast in-plane uniformity measurement significantly contributes to both productivity and quality in semiconductor manufacturing.
Chamber-induced thickness variation
Thickness inspection in semiconductor process
Measurement example
Pattern evaluation (comparison of thickness distribution profiles)
We acquired the thickness distribution between patterns and compared the thickness distribution profiles of Optical NanoGauge, which uses a point sensor method, and HyperGauge, which uses an area-based method. The results show that HyperGauge can measure film thickness with accuracy comparable to the point sensor method.
Large non-uniformity: SiO2 300 nm
Small non-uniformity: SiO2 500 nm
Ultra-thin film: SiO2 10 nm
Pattern evaluation: SiOx2 300 nm
Through water & glass: SiO2 500 nm
Measurement principle
HyperGauge employs spectroscopic interferometry. This method analyzes the reflections from thin-film samples to measure film thickness. The interference spectrum shifts depending on the film thickness.
λ-Capture technology for high speed wavelength measurement
λ-Capture is a proprietary wavelength detection technology that enables wavelength measurement without using a spectrometer.When performing wavelength measurement of the entire wafer, point measurement with a conventional spectrometer or line measurement with an imaging spectrometer takes an enormous amount of time.
By utilizing two high-sensitivity cameras, it measures wavelengths across an area, allowing high-speed spectroscopic measurement of the entire wafer surface. By incorporating this technology into HyperGauge, in-plane film thickness distribution measurement across the wafer is achieved in just 5 seconds.
Specifications
| Product number | C17319-11 |
|---|---|
| Measurement film thickness range | 10 nm to 1000 nm |
| Measurement accuracy | Film thickness 10 nm to 100 nm: 0.1 nm Film thickness 100 nm to 1000 nm: ±0.1 ％ |
| Measurement reproducibility | Film thickness 10 nm to 100 nm (96 integrations): ±1 nm Film thickness 100 nm to 1000 nm (96 integrations): ±1 ％ |
| Stability | Temperature dependence: Environmental temperature variation +20℃ to + 30℃: ±1 ％ Height dependency (5 mm height variation): ±1 ％ Long-term stability (1 hour after startup): ±0.5 ％ |
| Field of view | Full 300 mm wafer surface |
| Spatial resolution | 0.3 mm/pixel |
| Working distance | Field lens botton-to-sample surface distance: 30 nm to 100 mm |
| Analysis | λ-Capture analysis |
| Measurement time (including analysis time)*1 | 5 seconds |
| External communication interface | Camera Link, RS232C |
| Power supply voltage | DC 24 V |
| Power consumption | Approx. 40 W |
*1 Depends on measurement and analysis conditions.
Dimensions
- Confirmation
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