InGaAs area image sensor


Image sensor with 64 × 64 pixels developed for two-dimensional infrared imaging


The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily obtained by just supplying a master clock (MCLK) and master start pulse (MSP) from external digital inputs. The G11097-0606S has 64×64 pixels arrayed at a 50 μm pitch and their signals are read out from a single video line. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium bumps. Electrical signals in the ROIC are converted into voltage signals by charge amplifiers and then sequentially output from the video line by the shift register. The G11097-0606S is hermetically sealed in a TO-8 package together with a onestage thermoelectric cooler to deliver low-cost yet highly stable operation.

- Spectral response range: 0.95 to 1.7 μm
- Excellent linearity by offset compensation
- High sensitivity: 1600 nV/e-
- Simultaneous charge integration for all pixels (global shutter mode)
- Simple operation (built-in timing generator)
- One-stage TE-cooled
- Low cost

Spectral response range 950 to 1700 nm
Peak sensitivity wavelength (typ.) 1550 nm
Image size 3.2 × 3.2 mm
Pixel size 50 × 50 μm
Pixel pitch 50 μm
Number of total pixels 64 × 64 pixels
Package Metal
Cooling One-stage TE-cooled
Frame rate (max.) 1025 frames/s
Dark current (typ.) 2 pA
Measurement condition Ta=25 ℃, Td=25 ℃, Vdd=5 V, PD_bias=4.5 V

Spectral response

Dimensional outline (unit: mm)

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