InAsSb photovoltaic detector

P16114-011MN

High sensitivity and high-speed IR detector (up to 10 μm band)

 

The P16114-011MN is an infrared detector that have high sensitivity in the spectral band up to 10 μm.
This high sensitivity has been achieved due to Hamamatsu unique crystal growth technology and process technology. By using a back-illuminated structure, the photosensitivity has been improved compared to the front-illuminated type. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

 

Features
- High sensitivity
- High-speed response
- High shunt resistance
- RoHS compliant (lead, mercury, cadmium free)

Number of elements 1
Photosensitive area 0.7 × 0.7 mm
Package Metal
Package category TO-5
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 7.4 μm
Cutoff wavelength (typ.) 11.0 μm
Photosensitivity (typ.) 5.0 mA/W
Detectivity D* (typ.) 1.0 × 108 cm・Hz1/2/W
Noise equivalent power (typ.) 7.1 × 10-10 W/Hz1/2
Rise time (typ.) 3 ns
Terminal capacitance (typ.) 1.2 pF
Measurement condition Ta=25 ℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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