InAsSb photovoltaic detector

P16114-011MN

Infrared detector with high photosensitivity (up to 10 μm band)

 

The P16114-011MN is an infrared detector that have high sensitivity in the spectral band up to 10 μm. This high sensitivity has been achieved due to Hamamatsu unique crystal growth technology and process technology. By using a back-illuminated structure, the photosensitivity has been improved compared to the front-illuminated type. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

 

Features
- High sensitivity
- High-speed response
- High shunt resistance
- RoHS compliant (lead, mercury, cadmium free)

Notice

The chip of this product is not sealed and is exposed.
Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Precautions / Unsealed products” described below.

Specifications

Photosensitive area 0.7×0.7 mm
Number of elements 1
Package TO-5
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 7.4 μm
Cutoff wavelength (typ.) 11.0 μm
Photosensitivity (typ.) 0.005 A/W
Detectivity D* (typ.) 1.0×108 cm・Hz1/2/W
Noise equivalent power (typ.) 7.1×10-10 W/Hz1/2
Rise time (typ.) 3 ns
Terminal capacitance (typ.) 1.2 pF
Measurement condition Ta=25℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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