Si PIN photodiode

S14537-320

Si detectors for high-energy particles

 

The S14537 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC board with an opening for the purpose of ΔE/E detection of charged particles and X-rays.


Features
- Large area
- Low dark current
- High voltage tolerance

Notice

The chip of this product is not sealed and is exposed.
Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Precautions / Unsealed products” described below.

Specifications

Photosensitive area 28 × 28 mm
Chip thickness 320 ± 15 μm
Dead layer thickness (Front side) 1.5 μm
Dead layer thickness (Rear side) 20 μm
Full depletion voltage max. 100 V
Dark current max. 50 nA
Cuttoff frequency 8 MHz
Terminal capacitance 300 pF

Dimensional outline (unit: mm)

Related documents

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Support
  • Other

Contact us