Si photodiode

S15289-33

High UV resistant and back-illuminated Si photodiode with CSP structure

 

The S15289-33 is a back-illuminated type Si photodiode that has achieved high reliability for monitoring ultraviolet light. It exhibits low sensitivity deterioration under UV light irradiation and is suitable for applications such as monitoring intense UV light sources. It is designed with minimal dead space around the product. This makes it possible to arrange multiple products side by side.


Features
-High sensitivity in UV region
-High reliability in UV light irradiation
-Compatible with lead-free solder reflow

 

Notice

The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Unsealed products / Precautions” described below.

Unsealed products / Precautions [PDF]

Specifications

Photosensitive area 2.5 × 2.5 mm
Number of elements 1
Package Glass epoxy
Package category CSP
Cooling Non-cooled
Reverse voltage (max.) 10 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 1000 nm
Photosensitivity (typ.) 0.54 A/W
Dark current (max.) 300 pA
Rise time (typ.) 30 μs
Terminal capacitance (typ.) 70 pF
Noise equivalent power (typ.) 7.6 × 10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=1000 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kH, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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