Si photodiode

S16008-33

Si photodiode for visible to near infrared region

 

The S16008-33 is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series.


Features
-High sensitivity in visible to near infrared region
-Low dark current
-Superior linearity
-Compatible with lead-free solder reflow

 

Photosensitive area 2.4 × 2.4 mm
Number of elements 1
Package Glass epoxy
Package category Surface mount type
Cooling Non-cooled
Spectral response range 380 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.64 A/W
Dark current (max.) 5 pA
Rise time (typ.) 1.5 μs
Terminal capacitance (typ.) 700 pF
Noise equivalent power (typ.) 9.0 × 10-16 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=10 V, Rise time: VR=0 V, RL=1 kΩ, 10 to 90%, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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