InGaAs linear image sensor
The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.
|Image size||12.8 x 0.5 mm|
|Pixel size||50 x 500 μm|
|Pixel pitch||50 μm|
|Number of total pixels||256 pixels|
|Line rate (max.)||17200 lines/s|
|Spectral response range||500 to 1700 nm|
|Measurement condition||unless otherwise noted, Typ. Ta=25 ℃,Vdd=5 V,INP=Vinp=PDN=4 V,Fvref=1.2V,Vφ=5V,f=500 kHz|
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