Products

Quality Control
We are actively taking measures to improve product quality levels.

Applications

Why Hamamatsu?

Support

Our Company

( )

Select your region and country.

InGaAs PIN photodiode

G8370-10

null

Ceramic package with large active area (φ10 mm)

Ceramic package with large active area (φ10 mm)

 

 

Features
- Large active area: φ10 mm
- High sensitivity: 0.95 A/W Typ. (λ=1.55 μm)
- Low dark current
- Low PDL: 5 mdB Typ., 10 mdB Max.
- Photo response non-uniformity: ±2 % Typ.

If you like the product on this page, save it to your wishlist.

Specifications

Photosensitive area φ10.0 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1 A/W
Dark current (max.) 2000 nA
Cutoff frequency (typ.) 0.1 MHz
Terminal capacitance (typ.) 20000 pF
Noise equivalent power (typ.) 6×10-13 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=10 mV, Cutoff frequency: VR=0 V, RL=50 Ω, Terminal capacitance: VR=0 V, f=1 MHz

Spectral response

KIRDB0284

Dimensional outline (unit: mm)

KIRDA0167

Contact us for more information.

Contact us