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Photosensor module with gate function

H11526-20

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The H11526 series is a photosensor module that allows gate operation. The combination of built-in metal package PMT and gate circuit makes this module compact yet still provides excellent characteristics: 100 ns minimum gate width, 10 kHz repetition rate. This module also contains a high-voltage power supply so that PMT gain can be varied by simply adjusting the control voltage. The internal protection monitor issues an error signal if high-intensity light enters the module.

There are two types of gate operation and they has own Type Numbers.
H11526-20-NN : Normally ON
H11526-20-NF : Normally OFF
Please see PDF catalog about the gate operation details.

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Specifications

Photocathode Area Shape Round
Photocathode Area Size Dia.8 mm
Wavelength (Short) 230 nm
Wavelength (Long) 920 nm
Wavelength (Peak) 630 nm
Dimension (W x H x D) 20.0 x 50.0 x 100.0 mm
Input Voltage +14.5 to +15.5 V
Max. Input Voltage 16 V
Max. Input Current 60 mA
Max. Output Signal Current 100 μA
Max. Control Voltage +0.9 (Input Impedance 10 k-ohm) V
Recommended Control Voltage Adjustment Range +0.4 to +0.9 (Input Impedance 10 k-ohm) V
[Cathode] Luminous Sensitivity Min. 350 μA/lm
[Cathode] Luminous Sensitivity Typ. 500 μA/lm
[Cathode] Red/White Ratio Typ. 0.45
[Cathode] Radiant Sensitivity Typ. 78 mA/W
[Anode] Luminous Sensitivity Min 350 A/lm
[Anode] Luminous Sensitivity Typ. 1000 A/lm
[Anode] Radiant Sensitivity Typ. 1.5 x 105 A/W
[Anode] Dark Current (after 30min.) Typ. 10 nA
[Anode] Dark Current (after 30min.) Max. 100 nA
[Time Response] Rise Time Typ. 0.57 ns
Ripple Noise (peak to peak) Max. 5 mV
Settling Time Max. 2 s
Operating Ambient Temperature +5 to +45 ℃
Storage Temperature -20 to +50 ℃
Weight 105 g

Gate characteristics

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