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Photosensor module with gate function



・High quantum efficiency: GaAsP photocathode
・Compact size
・Gate function

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Photocathode Area Shape Round
Photocathode Area Size Dia.5 mm
Wavelength (Short) 300 nm
Wavelength (Long) 740 nm
Wavelength (Peak) 520 nm
Dimension (W x H x D) 51.0 x 30.0 x 25.0 mm
Input Voltage +4.5 to +5.5 V
Max. Input Voltage +6 V
Max. Input Current 10 mA
Max. Output Signal Current 40 μA
Max. Control Voltage +0.9 (Input impedance 1 MΩ) V
Recommended Control Voltage Adjustment Range +0.5 to +0.8 (Input impedance 1 MΩ) V
[Cathode] Radiant Sensitivity Typ. 189 mA/W
[Anode] Radiant Sensitivity Typ. 3.8 x 105 A/W
[Anode] Dark Current (after 30min.) Typ. 3 nA
[Anode] Dark Current (after 30min.) Max. 10 nA
[Anode] P Type Dark Count Typ. 6000 s-1
[Anode] P Type Dark Count Max. 18 000 s-1
[Time Response] Rise Time Typ. 1.0 ns
Ripple Noise (peak to peak) Max. 0.6 mV
Settling Time Max. 10 s
Operating Ambient Temperature +5 to +35 ℃
Storage Temperature -20 to +50 ℃
Weight 85 g

Gate specifications

Parameter Description / Value Unit
Gate mode Mode Normally ON
Gate width (FWHM) 1 ms to DC
Rise time Typ. 0.1 ms
Fall time Typ. 0.3 ms
Repetition rate Max. 300 Hz (Gate width 1 ms)
Switching ratio Typ. 103
Delay time Typ. 0.1 (At rise), 0.6 (At fall) ms
Gate signal input Level TTL level
(High level: +2 V to +5 V)
Switching ratio 10

Dimensional outline (Unit: mm)

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