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Si photodiode

S1336-44BQ

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UV to near IR for precision photometry


Features
- High sensitivity in UV range
- Low capacitance
- High reliability

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Specifications

Photosensitive area 3.6 × 3.6 mm
Number of elements 1
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 50 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 150 pF
Noise equivalent power (typ.) 1×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Spectral response

KSPDB0098

Dimensional outline (unit: mm)

KSPDA0199

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