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Si PIN photodiode

S3590-09

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Large photosensitive area Si PIN photodiode


Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Bare chip type (unsealed)
-High quantum efficiency
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

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Notice

The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Unsealed products / Precautions” described below.

Unsealed products / Precautions [PDF]

Specifications

Photosensitive area 10 × 10 mm
Number of elements 1
Package Ceramic
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 6000 pA
Cutoff frequency (typ.) 40 MHz
Terminal capacitance (typ.) 40 pF
Noise equivalent power (typ.) 3.8×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted

Spectral response

k_s3590-09_sr_xx.jpg

Dimensional outline (unit: mm)

KPINA0098

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