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Si photodiode array



16 element Si photodiode array for UV to NIR

The S4111-16R is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, The S4111-16R is able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window (custom order products).

-Large photosensitive area
-Low crosstalk
-Enhanced infrared sensitivity
-low dark current

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Element size (per 1 element) 0.9 × 1.45 mm
Number of elements 16
Package Ceramic
Package category 18pin-DIP
Scintillator type None
Cooling Non-cooled
Reverse voltage (max.) 15 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.58 A/W
Dark current (max.) 5 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 200 pF
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
per one element, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V

Spectral response


Dimensional outline (unit: mm)


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