Si PIN photodiode
The S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 um). When bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us.
|Photosensitive area||10 × 10 mm|
|Number of elements||1|
|Reverse voltage (max.)||100 V|
|Spectral response range||340 to 1100 nm|
|Peak sensitivity wavelength (typ.)||960 nm|
|Photosensitivity (typ.)||0.66 A/W|
|Dark current (max.)||6000 pA|
|Cutoff frequency (typ.)||40 MHz|
|Terminal capacitance (typ.)||40 pF|
|Measurement condition||Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz
Certain type of cookies may require the data subject’s consent before storing them on the computer.
This website uses two types of cookies:
There are two ways to manage cookie preferences.
You may opt-out of Google Analytics cookies by the websites provided by Google:
We inform you that in such case you will not be able to wholly use all functions of our website.