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V6833P

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Specifications

Feature Third Generation, with Power Supply
Spectral Response (Short) 370 nm
Spectral Response (Long) 920 nm
Spectral Response (Peak) 600 to 750 nm
Input Window Borosilicate Glass
Index of Refraction 1.49
Effective Photocathode Area Dia.17.5 mm
Stage of MCP 1
Photocathode Material GaAs
Gate Function Non
Minimum Gate Time - ns
Luminous Sensitivity 1500 μA/lm
Radiant Sensitivity 170 mA/W
Quantum Efficiency (QE) 30 %
Luminous Gain 4.0 x 104 (lm/m2)/lx
Radiant Emittance Gain 1.2 x 104 (W/m2)/(W/m2)
Equivalent Background Input (EBI) 2.0 x 10-11 lm/cm2
Equivalent Background Input (EBI) 4.0 x 10-14 W/cm2
Limiting Resolution 64 Lp/mm
Operation Ambient Temperature -20 to +40 ℃
Storage Ambient Temperature -55 to +60 ℃
Maximum Shock 300 m/s2 (30G), 18 ms
Maximum Vibration 10 Hz to 55 Hz, 0.7 mm (p-p)

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