NMOS linear image sensor

S3924-512Q

Voltage output type with current-integration readout circuit and impedance conversion circuit

NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3924-512Q has a current-integration readout circuit utilizing the video line and an impedance conversion circuit. The output is available in boxcar waveform allowing signal readout with a simple external circuit. The photodiode of S3924-512Q has a height of 2.5 mm and is arrayed in a row at a spacing of 25 μm. Quartz glass is the standard window material.


Features
- Built-in current-integration readout circuit utilizing video line capacitance and impedance conversion circuit (boxcar waveform output)
- Wide active area
- High UV sensitivity with good stability
- Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature
- Excellent output linearity and sensitivity spatial uniformity
- Low voltage, single power supply operation
- Start pulse, clock pulse and video line reset pulse are CMOS logic compatible

Type Voltage output type
Image size 12.8 x 2.5 mm
Number of effective pixels 512 x 1 pixels
Pixel size 25 x 2500 μm
Spectral response range 200 to 1000 nm
Line rate (max.) 975 lines/s
Cooling Non-cooled
Window material Quartz
Package Ceramic
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
Saturation charge: Reset V=2.5 V, Vdd=5.0 V, Vφ=5.0 V

Spectral response

Dimensional outline (unit: mm)

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