InGaAs area image sensor


Image sensor with 128 × 128 pixels developed for two-dimensional infrared imaging


The G12242-0707W has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by indium bumps. The timing generator in the ROIC provides an analog video output and AD-TRIG output which are obtained by just supplying a master clock (MCLK) and master start pulse (MSP) as digital inputs from external sources.The G12242-0707W has 128 × 128 pixels arrayed at a 20 μm pitch and their signals are read out from a video line. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium pumps. Electrical signals in the ROIC are converted into voltage signals by charge amplifiers and then sequentially output from the video line by the shift register. The G12242-0707W is hermetically sealed in a TO-8 package together with a two-stage thermoelectric cooler to deliver low-cost yet highly stable operation.

- Spectral response range: 0.95 to 1.7 μm
- High sensitivity: 2000 nV/e-
- Frame rate: 258 fps> - Global shutter mode and rolling shutter mode switchable
- Simple operation (built-in timing generator)
- Two-stage TE-cooled
- Low cost

Spectral response range 950 to 1700 nm
Peak sensitivity wavelength (typ.) 1550 nm
Image size 2.56 × 2.56 mm
Pixel size 20 × 20 μm
Pixel pitch 20 μm
Number of total pixels 128 × 128 pixels
Package Metal
Cooling Two-stage TE-cooled
Frame rate (max.) 258 frames/s
Dark current (typ.) 0.5 pA
Measurement condition Ta=25 ℃, Td=15 ℃, Vdd=5 V, PD_bias=3 V

Spectral response

Dimensional outline (unit: mm)

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