InAsSb photovoltaic detector

P17442-011MS

Infrared detector with large photosensitive area (up to 5 μm band)

 

The P17442-011MS is an infrared detector that have high sensitivity in the spectral band up to 5 μm.
This high sensitivity has been achieved due to Hamamatsu’s unique crystal growth technology and process technology. By using a back-illuminated structure, we greatly improved the sensitivity temperature coefficient compared to the front-illuminated type. The output signal has been increased by enlarging the photosensitive area compared to the P16112/P16612 series. This product is an environmentally friendly infrared detector and do not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

 

Features
- High sensitivity
- High-speed response
- RoHS compliant (lead, mercury, cadmium free)

Photosensitive area 1.0 × 1.0 mm
Number of elements 1
Package Metal
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 4.1 μm
Cutoff wavelength (typ.) 5.3 μm
Photosensitivity (typ.) 65 mA/W
Detectivity D* (typ.) 1.0 × 109 cm・Hz1/2/W
Noise equivalent power (typ.) 1.0 × 10-10 W/Hz1/2
Rise time (typ.) 15 ns
Terminal capacitance (typ.) 100 pF
Measurement condition Ta=25 ℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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