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InGaAs linear image sensor

G11135-512DE

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Single video line (512 pixels)near infrared image sensor (0.95 to 1.7 μm)

The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit, a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium bumps.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.


Features
- Single video line (512 pixels)
- High-speed data rate: 5 MHz max.
- Choice of two conversion efficiency levels
- Pixel size: 25 × 25 μm
- Built-in temperature sensor
- Small variations in linearity between pixels
- Low cost

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Specifications

Image size 12.8 x 0.025 mm
Pixel size 25 x 25 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Ceramic
Cooling Non-cooled
Line rate (max.) 8150 lines/s
Spectral response range 950 to 1700 nm
Dark current (max.) 2.5 pA
Measurement condition Typ. Ta=25 ℃, unless otherwise noted

Spectral response

KMIRB0051

Dimensional outline (unit: mm)

KMIRA0022

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