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InGaAs APD

G14858-0020AA

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InGaAs APD that greatly reduces dark current

This InGaAs APD (avalanche photodiode) greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA is used for distance measurement, low-light-level detection, and so on.


Features
- Low dark current
- Low capacitance
- High sensitivity

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Specifications

Number of elements 1
Photosensitive area φ0.2 mm
Package Metal
Package Category TO-18
Spectral response range 950 to 1700 nm
Peak sensitivity wavelength (typ.) 1550 nm
Photosensitivity (typ.) 0.8 A/W
Dark current (max.) 50 nA
Cutoff frequency (typ.) 900 MHz
Terminal capacitance (typ.) 2 pF
Breakdown voltage (typ.) 65 V
Temperature coefficient of breakdown voltage (typ.) 0.1 V/℃
Measurement condition Ta=25℃, Photosensitivity: λ=1.55 μm, M=1

Spectral response

KAPDB0417

Dimensional outline (unit: mm)

KAPDA0192

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