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NMOS linear image sensor



Current output, high UV sensitivity, excellent linearity, low power consumption

NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output linearity and wide dynamic range. The photodiode of S3904-1024Q has a height of 2.5 mm but is arrayed at a spacing of 25 μm. Quartz glass is the standard window material.

- Wide active area
- High UV sensitivity with good stability
- Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature
- Excellent output linearity and sensitivity spatial uniformity
- Low power consumption: 1 mW max.
- Start pulse and clock pulses are CMOS logic compatible

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Type Current output type
(Standard type)
Image size 25.6 x 2.5 mm
Number of effective pixels 1024 x 1 pixels
Pixel size 25 x 2500 μm
Spectral response range 200 to 1000 nm
Line rate (max.) 1950 lines/s
Cooling Non-cooled
Window material Quartz
Package Ceramic
Dedicated driver circuit C7884, C7884G, C7884-01, C7884G-01, C8892
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
Saturation charge: Vb=2.0 V, Vφ=5.0 V

Spectral response


Dimensional outline (unit: mm)


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